advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 250v simple drive requirement r ds(on) 68m lower on-resistance i d 30a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i dm a p d @t c =25 w w/ e as single pulse avalanche energy 3 mj i ar avalanche current a t stg t j symbol value units rthj-c thermal resistance junction-case max. 1.5 /w rthj-a thermal resistance junction-ambient max. 42 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 83 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.7 pulsed drain current 1 120 gate-source voltage 30 continuous drain current, v gs @ 10v 30 parameter rating drain-source voltage 250 201216053-1/4 AP30N30WI pb free plating product 450 30 g d s a p30n30 from apec provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . the to-3pf fullpack eliminates the need for additional insulating hardware in commercial-industrial applications. to-3pf g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =10ma 250 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =10ma - 0.24 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =15a - - 68 m v gs(th) gate threshold voltage v ds =v gs , i d =1ma 1.5 - 3.5 v g fs forward transconductance v ds =10v, i d =15a - 23 - s i dss drain-source leakage current (t j =25 o c) v ds =250v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =250v ,v gs =0v - - 200 ua i gss gate-source leakage v gs = 30v - - 1 ua q g total gate charge 2 i d =15a - 63 100 nc q gs gate-source charge v ds =200v - 19 - nc q gd gate-drain ("miller") charge v gs =10v - 14 - nc t d(on) turn-on delay time 2 v ds =125v - 28 - ns t r rise time i d =15a - 36 - ns t d(off) turn-off delay time r g =10 , v gs =10v - 84 - ns t f fall time r d =8.3 -45- ns c iss input capacitance v gs =0v - 4290 6900 pf c oss output capacitance v ds =25v - 550 - pf c rss reverse transfer capacitance f=1.0mhz - 6 - pf r g gate resistance f=1.0mhz - 1.9 3 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =30a, v gs =0v - - 1.5 v t rr reverse recovery time 2 i s =15a, v gs =0v - 235 - ns q rr reverse recovery charge di/dt=100a/s - 2.24 - c notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. 3.starting t j =25 o c , v dd =50v , l=1mh , r g =25 , i as =30a. 2/4 AP30N30WI
AP30N30WI fig 1. typical output characteristics fig 2. typical output characteristics 30 fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 1 .5 42 20 1 2 1 6053- 1 /4 fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 0 10 20 30 40 50 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g =4. 5 v 0 10 20 30 40 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c v g =4. 5 v 10v 7.0v 6.0v 5.0v 30 70 110 150 190 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =15a t c =25 o c 0.3 0.8 1.3 1.8 2.3 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =15a v g =10v 0 3 6 9 12 15 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics 30 fig 9. maximum safe operating area fig 10. effective transient thermal impedance 20 1 2 1 6053- 1 /4 fig 11. transfer characteristics fig 12. gate charge waveform 4/4 AP30N30WI 0 4 8 12 16 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds = 120 v v ds = 160 v v ds = 200 v i d =15a q v g 10v q gs q gd q g charge 1 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms 1s dc 0 10 20 30 40 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
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